The introduction of SiC power MOSFETs has enabled power systems to reduce size, weight, and cost. The latest Generation 3 MOSFETs from Wolfspeed have allowed further improvements in cost and performance. The results of Gen 3 MOSFETs in terms of avalanche ruggedness are presented. Further improvement in cost structure is being enabled by the transition to 150 mm diameter SiC substrates and epitaxy, and eventually 200 mm diameter SiC. Reductions in defect densities allow further cost reduction through improved yields.