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  • Session 1: Plenary I: 5G Technologies
  • 14.3 Development of Homoepitaxial Growth of Ga2O3 by Hydride Vapor Phase Epitaxy

    Thursday May 25, 2017 9:05 AM - Thursday May 25, 2017 9:25 AM

    Indian Wells N & O

    In this work, we outline our progress toward understanding the promises and limitations of hydride vapor phase epitaxy (HVPE) of homoepitaxial Ga2O3 films in terms of the surface preparation, film nucleation, achievable growth rates, and doping capabilities. We also present evidence that hydrogen acts as a shallow donor in Ga2O3 and show that background hydrogen concentrations can give rise to controlled doping at the 1E16 level and below.

    14.3 Development of Homoepitaxial Growth of Ga2O3 by Hydride Vapor Phase Epitaxy