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  • Session 1: Plenary I: 5G Technologies
  • 14.2 Growth of Single Crystal Beta-Gallium Oxide (β-Ga2O3) Semiconductor Material

    Thursday May 25, 2017 8:45 AM - Thursday May 25, 2017 9:05 AM

    Indian Wells N & O

    Gallium oxide has begun to receive attention for its unique properties, including its wide bandgap of about 4.7 - 4.9 eV and estimated electric field breakdown of 8 MV/cm. This is approximately two to three times larger than that of SiC or GaN. These material properties lead to a Baliga Figure of Merit four times that of GaN. Gallium oxide exists in five crystalline polytypes: α, β, γ, δ and ε. Beta-gallium oxide (β-Ga2O3) is the only stable, single-crystal form of gallium oxide at high temperatures. Gallium oxide is suitable for bulk growth using techniques such as Czochralski, Float Zone, Vertical Bridgman or Edge-defined Film-fed Growth (EFG). Doping with Si or Sn provides n-type conductivity and doping with Mg or Fe provides semi-insulating characteristics. These characteristics enable fabrication of a variety of vertical and lateral device topologies requiring higher power. In this paper we will review on the growth and scale-up of β-Ga2O3 from small crystalline grains to 50-mm diameter boules using the Czochralski growth method.

    14.2 Growth of Single Crystal Beta-Gallium Oxide (β-Ga2O3) Semiconductor Material