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Session 1: Plenary I: 5G Technologies
Fujitsu Laboratories LTD.
Motonobu Sato received his M.E. degree in energy engineering and science from Nagoya University in 1998. From 1998 on, he worked at two different departments at Fujitsu Ltd. on research on reliability of devices for LSI processes as well as development of processes on Cu interconnects for 200mm/300mm wafers. From 2008 he was engaged in R&D of carbon nanotube/graphene interconnects for Emerging Research Materials at Fujitsu Laboratories Ltd. and National Institute of Advanced Industrial Science and Technology (AIST). Since 2014, he is involved in the heterogeneous integration of GaN-HEMT MMIC at Fujitsu Laboratories Ltd., Atsugi, Japan.
- Thursday May 25, 2017 8:45 AM - Thursday May 25, 2017 9:05 AM 15.2 Heterogeneous Integration of Microwave GaN Power Amplifiers with Si Matching Circuits