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Session 1: Plenary I: 5G Technologies
Air Force Research Laboratory
Mr. John Blevins is a Senior Materials Engineer for the Devices for Sensing Branch in the Sensors Directorate of the Air Force Research Laboratory (AFRL). Mr. Blevins has extensive experience in the development and manufacturing of compound semiconductor materials and has served as Air Force Program Manager for numerous DARPA semiconductor technology development initiatives. Mr. Blevins is currently responsible for a number of semiconductor technology initiatives aimed at development of near junction thermal management technologies for high power gallium nitride electronics as well as development of novel wide bandgap semiconductor materials. Mr. Blevins possesses a B.S. and M.S. in Materials Engineering from Wright State University and University of Dayton respectively.
- Thursday May 25, 2017 8:45 AM - Thursday May 25, 2017 9:05 AM 14.2 Growth of Single Crystal Beta-Gallium Oxide (β-Ga2O3) Semiconductor Material
- Thursday May 25, 2017 9:05 AM - Thursday May 25, 2017 9:25 AM 14.3 Development of Homoepitaxial Growth of Ga2O3 by Hydride Vapor Phase Epitaxy
- Thursday May 25, 2017 9:25 AM - Thursday May 25, 2017 9:45 AM 14.4 Device Development of Gallium Oxide MOSFETs Grown by MOVPE on Native Substrates for High-Voltage Applications